Contacts for Monolithic 3D architecture: Study of Ni$_{0.9}$Co$_{0.1}$ Silicide Formation

Auteur correspondant: "philippe.rodriguez@cea.fr"; International audience; In this work, we studied the solid-state reaction between a Ni$_{0.9}$Co$_{0.1}$ film and a silicon substrate. NiCo silicide is considered to substitute Ni-and NiPt-based silicides in 3D integration in order to extend the bottom transistor thermal stability. Thanks to the combined analysis of sheet resistance data, X-ray reflectivity spectra modelling, X-ray diffraction and wavelength dispersive X-ray fluorescence analyses on Ni$_{0.9}$Co$_{0.1}$ /Si samples annealed at various temperatures, we were able to describe the phase sequence of the NiCo silicide formation.