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Anomalous low-temperature dopant diffusivity and defect structure in Sb- and Sb/B-implanted annealed silicon samples
- Source :
- Physical review. B, Condensed matter. 52(3)
- Publication Year :
- 1995
Details
- ISSN :
- 01631829
- Volume :
- 52
- Issue :
- 3
- Database :
- OpenAIRE
- Journal :
- Physical review. B, Condensed matter
- Accession number :
- edsair.doi.dedup.....951481bbcd6028b3b41e7123cc9f8afb