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Magnetic tunnel transistor with a perpendicular Co/Ni multilayer sputtered on a Si/Cu(1 0 0) Schottky diode
- Source :
- Journal of Physics D: Applied Physics, Journal of Physics D: Applied Physics, IOP Publishing, 2016, 49 (35), ⟨10.1088/0022-3727/49/35/355003⟩
- Publication Year :
- 2016
- Publisher :
- HAL CCSD, 2016.
-
Abstract
- We have studied a magnetic tunnel transistor (MTT) structure based on a MgO tunnelling barrier emitter and a [Co/Ni]5/Cu multilayer base on a Si (0 0 1) substrate. Evident links between the Schottky barrier preparation techniques and the properties of perpendicular magnetic anisotropy (PMA) in the [Co/Ni] multilayer have been revealed by combined x-ray diffraction and magnetometry analyses. The Si surface treated by hydrofluoric acid (HF) is found to favour a Cu [1 0 0] texture growth which is detrimental to the [Co/Ni]5 PMA properties. However, a Ta layer insertion can restore the [1 1 1] texture required for the PMA appearance. By carefully engineering the base crystallographic texture structure, we obtain both a good quality of Schottky barrier and PMA property; a magneto-current ratio of 162% has been measured for MTTs with a spin-valve base composed of one magnetic layer having in-plane anisotropy and another one with out-of-plane anisotropy.
- Subjects :
- Materials science
Acoustics and Ultrasonics
Schottky barrier
Analytical chemistry
Schottky diode
02 engineering and technology
Substrate (electronics)
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Nuclear magnetic resonance
Hydrofluoric acid
chemistry
[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]
0103 physical sciences
Texture (crystalline)
010306 general physics
0210 nano-technology
Anisotropy
Layer (electronics)
Quantum tunnelling
ComputingMilieux_MISCELLANEOUS
Subjects
Details
- Language :
- English
- ISSN :
- 00223727 and 13616463
- Database :
- OpenAIRE
- Journal :
- Journal of Physics D: Applied Physics, Journal of Physics D: Applied Physics, IOP Publishing, 2016, 49 (35), ⟨10.1088/0022-3727/49/35/355003⟩
- Accession number :
- edsair.doi.dedup.....950b6bdc5e66b4394e30284743a06b95