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Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance
- Source :
- IEEE Transactions on Nuclear Science. 59:2920-2929
- Publication Year :
- 2012
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2012.
-
Abstract
- A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.
- Subjects :
- Nuclear and High Energy Physics
Space technology
Materials science
ta114
Dielectric strength
business.industry
Electrical engineering
Failure rate
Hardware_PERFORMANCEANDRELIABILITY
law.invention
Capacitor
Nuclear Energy and Engineering
law
Gate oxide
MOSFET
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
Electrical and Electronic Engineering
Power MOSFET
business
Radiation hardening
Hardware_LOGICDESIGN
Subjects
Details
- ISSN :
- 15581578 and 00189499
- Volume :
- 59
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi.dedup.....94089f41f5132dcd15d79867134831b7
- Full Text :
- https://doi.org/10.1109/tns.2012.2223761