Minority anion substitution by Ni in ZnO

Authors :: lmarina Pinto de Almeida Amorim
E Bosne
M.R. da Silva
L. M. C. Pereira
Stijn Decoster
Ulrich Wahl
Kristiaan Temst
Daniel Silva
André Vantomme
J. G. Correia
Source :: Repositório Científico de Acesso Aberto de Portugal, Repositório Científico de Acesso Aberto de Portugal (RCAAP), instacron:RCAAP, Applied physics letters 103(9), 091905 (2013). doi:10.1063/1.4820254
Publication Year :: 2013
Publisher :: AIP Publishing, 2013.
Abstract: We report on the lattice location of implanted Ni in ZnO using the β - emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors. © 2013 AIP Publishing LLC. ispartof: Applied Physics Letters vol:103 issue:4 status: published