Deuterium retention and out-gassing from beryllium oxide on beryllium

The desorption of D implanted into Be with a superficial oxide layer is studied. The different oxide thicknesses and implantation at different energies resulted in a strong variation of the fraction stopped within the oxide layer. Thermal desorption of D was subsequently performed, intermitted by nuclear reaction analysis for assessment of the D depth distributions and total retained amounts. For the conditions, where part of the D was deposited in the Be substrate, a sharp decrease of the retained amount of D occurs around 200 °C. This is attributed to the release from metallic Be. Correspondingly, the D and O depth profiles show that above 200 °C the remaining D is only retained in the BeO layer. Apparently, the superficial BeO layer does not act as a diffusion barrier for D that is released from the metallic substrate. The retained amount of D deposited within the BeO layer decreases steadily and is not completely released at 350 °C, the foreseen bake-out temperature in ITER.