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Efficient current injection scheme for nitride vertical cavity surface emitting lasers
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Abstract
- The authors report the realization of InGaN/GaN light emitting diodes (LEDs) with an electrical injection design suitable for vertical cavity surface emitting lasers. Controlled oxidation of an AlInN interlayer lattice matched to GaN allows confining the injected current in a 3 mu m diameter aperture. Submicron-scale characterization of the current flow and optical properties is achieved by means of microelectroluminescence measurements. LEDs can be safely driven, in continuous mode operation, up to current densities higher than 20 kA/cm(2). (c) 2007 American Institute of Physics.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
DISTRIBUTED BRAGG REFLECTORS
business.industry
Electroluminescence
Nitride
Laser
DIODE
Semiconductor laser theory
law.invention
MICROCAVITIES
Condensed Matter::Materials Science
Optics
law
Tunnel junction
Lattice (order)
Optoelectronics
TUNNEL JUNCTION
business
Diode
Light-emitting diode
Subjects
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....929c6fad666f53308eb1d4aa226faac2