Influence Of Molecule Dwell Time On µc-Si:H Properties

Authors :: Carla Minarini
Stefano Lettieri
M. Ambrico
Ubaldo Coscia
Giuseppina Ambrosone
P. Maddalena
Coscia, Ubaldo
Ambrosone, Giuseppina
Maddalena, Pasqualino
Lettieri, Stefano
M., Ambrico
C., Minarini
Publication Year :: 2002
Publisher :: Elsevier BV:PO Box 211, 1000 AE Amsterdam Netherlands:011 31 20 4853757, 011 31 20 4853642, 011 31 20 4853641, EMAIL: nlinfo-f@elsevier.nl, INTERNET: http://www.elsevier.nl, Fax: 011 31 20 4853598, 2002.
Abstract: Hydrogenated microcrystalline silicon (μc-Si:H) films have been prepared by plasma-enhanced chemical vapour deposition (PECVD) from a mixture of silane highly diluted in hydrogen. The effect of the molecule dwell time on the deposition rate and on the electrical and structural properties has been investigated. The molecule dwell time appears to control orientation and grain size. Highly conductive μc-Si:H films with a rough surface have been grown at a high deposition rate at higher molecule dwell time in an appropriate silane concentration. These films show an enhancement of the optical absorption in the near-infrared region suitable for photovoltaic applications.