Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

MLA

M. Pajek, et al. “Depth Profiles of Al Impurities Implanted in Si Wafers Determined by Means of the High-Resolution Grazing Emission X-Ray Fluorescence Technique.” Spectrochimica Acta Part B: Atomic Spectroscopy, vol. 65, June 2010, pp. 445–49. EBSCOhost, https://doi.org/10.1016/j.sab.2010.02.013.

APA

M. Pajek, Jakub Szlachetko, Stanisław H. Nowak, Wei Cao, J.-Cl. Dousse, Yves Kayser, Dariusz Banaś, Aldona Kubala-Kukuś, Paweł P. Jagodziński, M. Kavčič, & Joanna Hoszowska. (2010). Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique. Spectrochimica Acta Part B: Atomic Spectroscopy, 65, 445–449. https://doi.org/10.1016/j.sab.2010.02.013

Chicago

M. Pajek, Jakub Szlachetko, Stanisław H. Nowak, Wei Cao, J.-Cl. Dousse, Yves Kayser, Dariusz Banaś, et al. 2010. “Depth Profiles of Al Impurities Implanted in Si Wafers Determined by Means of the High-Resolution Grazing Emission X-Ray Fluorescence Technique.” Spectrochimica Acta Part B: Atomic Spectroscopy 65 (June): 445–49. doi:10.1016/j.sab.2010.02.013.