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Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform
- Source :
- Optics Express. 29:8358
- Publication Year :
- 2021
- Publisher :
- Optica Publishing Group, 2021.
-
Abstract
- In this letter, we report the first demonstration of monolithically integrated ultraviolet (UV) light emitting diodes (LEDs) and visible-blind UV photodetectors (PDs) employing the same p-GaN/AlGaN/GaN epi-structures grown on Si. Due to the radiative recombination of holes from the p-GaN layer with electrons from the 2-D electron gas (2DEG) accumulating at the AlGaN/GaN heterointerface, the forward biased LED with p-GaN/AlGaN/GaN junction exhibits uniform light emission at 360 nm. Facilitated by the high-mobility 2DEG channel governed by a p-GaN optical gate, the visible-blind phototransistor-type PDs show a low dark current of ∼10−7 mA/mm and a high responsivity of 3.5×105 A/W. Consequently, high-sensitivity photo response with a large photo-to-dark current ratio of over 106 and a response time less than 0.5 s is achieved in the PD under the UV illumination from the on-chip adjacent LED. The demonstrated simple integration scheme of high-performance UV PDs and LEDs shows great potential for various applications such as compact opto-isolators.
- Subjects :
- Materials science
business.industry
Photodetector
02 engineering and technology
Chemical vapor deposition
021001 nanoscience & nanotechnology
medicine.disease_cause
01 natural sciences
Atomic and Molecular Physics, and Optics
law.invention
010309 optics
Responsivity
Optics
law
0103 physical sciences
medicine
Optoelectronics
Spontaneous emission
Light emission
0210 nano-technology
business
Ultraviolet
Dark current
Light-emitting diode
Subjects
Details
- ISSN :
- 10944087
- Volume :
- 29
- Database :
- OpenAIRE
- Journal :
- Optics Express
- Accession number :
- edsair.doi.dedup.....90e7b326c651e4b24197c2c300e98230
- Full Text :
- https://doi.org/10.1364/oe.418843