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Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform

Authors :
Qifeng Lyu
Kei May Lau
Huaxing Jiang
Source :
Optics Express. 29:8358
Publication Year :
2021
Publisher :
Optica Publishing Group, 2021.

Abstract

In this letter, we report the first demonstration of monolithically integrated ultraviolet (UV) light emitting diodes (LEDs) and visible-blind UV photodetectors (PDs) employing the same p-GaN/AlGaN/GaN epi-structures grown on Si. Due to the radiative recombination of holes from the p-GaN layer with electrons from the 2-D electron gas (2DEG) accumulating at the AlGaN/GaN heterointerface, the forward biased LED with p-GaN/AlGaN/GaN junction exhibits uniform light emission at 360 nm. Facilitated by the high-mobility 2DEG channel governed by a p-GaN optical gate, the visible-blind phototransistor-type PDs show a low dark current of ∼10−7 mA/mm and a high responsivity of 3.5×105 A/W. Consequently, high-sensitivity photo response with a large photo-to-dark current ratio of over 106 and a response time less than 0.5 s is achieved in the PD under the UV illumination from the on-chip adjacent LED. The demonstrated simple integration scheme of high-performance UV PDs and LEDs shows great potential for various applications such as compact opto-isolators.

Details

ISSN :
10944087
Volume :
29
Database :
OpenAIRE
Journal :
Optics Express
Accession number :
edsair.doi.dedup.....90e7b326c651e4b24197c2c300e98230
Full Text :
https://doi.org/10.1364/oe.418843