Electrolytic in situ STM investigation of h-BN-Nanomesh

Single sheet boron nitride layers on thin rhodium (111) films were formed upon thermal decomposition of borazine under ultra-high vacuum (UHV) conditions. They were transferred and investigated in an electrolytic environment. In 0.1 M HClO4, the presence and stability of the so-called nanomesh super structure with a lattice constant of 3.2 nm is established with electrochemical impedance spectroscopy, cyclic voltammetry and subsequent imaging with in situ scanning tunneling microscopy (STM) under potential control. In the electrolyte, the BN nanomesh acts as a dielectric layer with an unusual behaviour of the impedance, where the capacitive component is larger than on a Rh(111) reference sample. It exhibits reversible hydrogen adsorption and desorption at a potential of −600 mV vs. a saturated mercury sulphate reference electrode (MSE). The unit cell of the nanomesh is imaged by STM and shows hexagonally arranged two-dimensional pores with a diameter of 2 nm. At a fixed potential, the nanomesh was stable for long time, but after repeated potential sweeps between +260 and −540 mV vs. MSE, STM indicates roughening, though a 12 × 12 superstructure was recovered after annealing in UHV. Keywords: Electrolytic STM, Impedance spectroscopy, Boron nitride, Nanomesh, Template