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Femtosecond ac Stark effect in semiconductor quantum wells: Extreme low- and high-intensity limits
- Source :
- Physical Review Letters. 62:1189-1192
- Publication Year :
- 1989
- Publisher :
- American Physical Society (APS), 1989.
-
Abstract
- We show that in quasi-2D GaAs quantum wells, below-resonance low-intensity excitation produces a pure shift of the excitons, contrary to ac Stark shifts in atomic systems. At high pump intensities two-photon 3D-real-carrier generation competes with the virtual 2D-exciton effects. We also show that dc fields applied perpendicular to the layers reduce the excitonic ac Stark effect.
- Subjects :
- Condensed Matter::Quantum Gases
Physics
chemistry.chemical_classification
Condensed matter physics
Condensed Matter::Other
Photoconductivity
Exciton
General Physics and Astronomy
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter::Materials Science
symbols.namesake
Stark effect
chemistry
Femtosecond
symbols
Perpendicular
Atomic physics
Inorganic compound
Quantum well
Excitation
Subjects
Details
- ISSN :
- 00319007
- Volume :
- 62
- Database :
- OpenAIRE
- Journal :
- Physical Review Letters
- Accession number :
- edsair.doi.dedup.....9065f00fb6ea25e88c1ba4f92bab8cd4