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Carbon-Rich Domain in Hexagonal Boron Nitride: Carrier Mobility Degradation and Anomalous Bending of the Landau Fan Diagram in Adjacent Graphene
- Source :
- Nano Letters. 19:7282-7286
- Publication Year :
- 2019
- Publisher :
- American Chemical Society (ACS), 2019.
-
Abstract
- Hexagonal boron nitride (h-BN) crystals grown under ultrahigh pressures and ultrahigh temperatures exhibit a high crystallinity and are used throughout the world as ideal substrates and insulating layers in van der Waals heterostructures. However, in their central region, these crystals have domains which contain a significant density of carbon impurities. In this study, we utilized cathodoluminescence and far-ultraviolet photoluminescence to reveal that the carbon (C)-rich domain can exist even after exfoliation. Then, we studied the carrier transport of graphene in h-BN/graphene/h-BN van der Waals heterostructures, precisely arranging the graphene to straddle the border of the C-rich domain in h-BN. We found that the carrier mobility of graphene on the C-rich h-BN domain was significantly suppressed. In addition, characteristic bending of the Landau fan diagram was observed on the electron-doped side. These results suggest that the C-rich domain in h-BN forms an impurity level and induces extrinsic carrier scattering into adjacent graphene.
- Subjects :
- Electron mobility
Photoluminescence
Materials science
Condensed matter physics
Graphene
Carrier scattering
Mechanical Engineering
chemistry.chemical_element
Bioengineering
Cathodoluminescence
02 engineering and technology
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
law.invention
Crystallinity
chemistry
Impurity
law
General Materials Science
0210 nano-technology
Carbon
Subjects
Details
- ISSN :
- 15306992 and 15306984
- Volume :
- 19
- Database :
- OpenAIRE
- Journal :
- Nano Letters
- Accession number :
- edsair.doi.dedup.....8f7044de6553ace049d182574f21e18a