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Temperature-dependent fine structure splitting in InGaN quantum dots

Authors :
Wang, T
Puchtler, TJ
Zhu, T
Jarman, J
Kocher, CC
Oliver, RA
Taylor, RA
Zhu, Tongtong [0000-0002-9481-8203]
Jarman, John [0000-0001-8095-8603]
Oliver, Rachel [0000-0003-0029-3993]
Apollo - University of Cambridge Repository
Source :
Applied Physics Letters. 111(5)

Abstract

We report the experimental observation of temperature-dependent fine structure splitting in semiconductor quantum dots using a non-polar (11-20) a-plane InGaN system, up to the on-chip Peltier cooling threshold of 200 K. At 5 K, a statistical average splitting of 443 ± 132 μeV has been found based on 81 quantum dots. The degree of fine structure splitting stays relatively constant for temperatures less than 100 K and only increases above that temperature. At 200 K, we find that the fine structure splitting ranges between 2 and 12 meV, which is an order of magnitude higher than that at low temperatures. Our investigations also show that phonon interactions at high temperatures might have a correlation with the degree of exchange interactions. The large fine structure splitting at 200 K makes it easier to isolate the individual components of the polarized emission spectrally, increasing the effective degree of polarization for potential on-chip applications of polarized single-photon sources.

Details

ISSN :
10773118 and 00036951
Volume :
111
Issue :
5
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi.dedup.....8e425160bd85640295d2321d7838eca2