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Modeling spin relaxation in semiconductor quantum wells: modifying the Elliot process
- Source :
- Vaughan, M P & Rorison, J M 2018, ' Modeling spin relaxation in semiconductor quantum wells : Modifying the Elliot process ', Semiconductor Science and Technology, vol. 33, no. 9, 094003 . https://doi.org/10.1088/1361-6641/aad28f
- Publication Year :
- 2018
- Publisher :
- IOP Publishing, 2018.
-
Abstract
- A model of the Elliot process for spin relaxation is developed that explicitly incorporates the Dresselhaus spin-splitting of the conduction band in semiconductors lacking an inversion symmetry. It is found that this model reduces to existing models in bulk if the scattering matrices are constructed from a superposition of eigenstates. It is shown that the amplitude for intra-sub-band spin relaxation disappears in quantum wells on the basis of existing models. However, an amplitude due to the Dresselhaus spin-splitting remains, becoming increasingly important as the well becomes narrower. It is also shown that this component does not disappear for scattering between spin states at the same wavevector. It is concluded that for quantum wells and lower dimensional semiconductors that this modified model should be used in analysis of the spin dynamics.
- Subjects :
- 0301 basic medicine
Physics
Condensed matter physics
Spin states
Condensed Matter::Other
Scattering
Point reflection
Spin–orbit interaction
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
spin relaxation
Electronic, Optical and Magnetic Materials
03 medical and health sciences
Superposition principle
quantum wells
030104 developmental biology
Amplitude
Materials Chemistry
Condensed Matter::Strongly Correlated Electrons
Wave vector
spin-orbit interaction
Electrical and Electronic Engineering
Quantum well
Subjects
Details
- ISSN :
- 13616641 and 02681242
- Volume :
- 33
- Database :
- OpenAIRE
- Journal :
- Semiconductor Science and Technology
- Accession number :
- edsair.doi.dedup.....8d63da422a32e77a3690fd3c0e4f3411
- Full Text :
- https://doi.org/10.1088/1361-6641/aad28f