Metallurgical studies of integrable Ni-based contacts for their use in III–V/Si heterogeneous photonics devices

International audience; Opening the way to large bandwidths and high data rates Silicon Photonics is of great interest. In the scope of co-integrating III-V devices with CMOS very large scale integration (VLSI), innovative contacts to III-V materials have to be developed. In this paper we study the metallurgical and electrical properties of Ni-based metallizations to n-InP and p-InGaAs. It appears that the integration of both metallizations must be realized at temperatures lower than or equal to 340 °C starting with that on n-InP.