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Tunnel and electrostatic coupling in graphene-LaAlO 3 /SrTiO 3 hybrid systems

Authors :: Vaidotas Miseikis
Stefano Roddaro
E. Di Gennaro
Fabio Beltram
Camilla Coletti
Vittorio Pellegrini
Iacopo Torre
A. Gamucci
Fabio Miletto Granozio
I. Aliaj
A. Sambri
Marco Polini
Aliaj, I.
Torre, I.
Miseikis, V.
DI GENNARO, Emiliano
Sambri, A.
Gamucci, A.
Coletti, C.
Beltram, F.
Granozio, F. M.
Polini, M.
Pellegrini, V.
Roddaro, S.
Aliaj, Ilirjan
Torre, Iacopo
di Gennaro, E.
Gamucci, Andrea
Beltram, Fabio
Polini, Marco
Roddaro, Stefano
Source :: APL Materials, APL Materials, Vol 4, Iss 6, Pp 066101-066101-7 (2016), APL materials 4 (2016). doi:10.1063/1.4953821, info:cnr-pdr/source/autori:I. Aliaj, I. Torre, V. Miseikis, E. di Gennaro, A. Sambri, A. Gamucci, C. Coletti, F. Beltram, F. M. Granozio, M. Polini, V. Pellegrini, and S. Roddaro/titolo:Tunnel and electrostatic coupling in graphene-LaAlO3%2FSrTiO3 hybrid systems/doi:10.1063%2F1.4953821/rivista:APL materials/anno:2016/pagina_da:/pagina_a:/intervallo_pagine:/volume:4
Publication Year :: 2016
Abstract: We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep 2-dimensional electron system. At low graphene-oxide inter-layer bias, the two electron systems are electrically isolated, despite their small spatial separation. A very efficient reciprocal gating of the two neighboring 2-dimensional systems is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic field-effects and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly coupled bilayer systems is discussed. (C) 2016 Author(s).