Back to Search
Start Over
Optical characterization of individual GaAs quantum dots grown with height control technique
- Source :
- RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia, instname
- Publication Year :
- 2013
- Publisher :
- American Institute of Physics (AIP), 2013.
-
Abstract
- We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. © 2013 AIP Publishing LLC.
- Subjects :
- Photoluminescence
Materials science
Nanostructure
GaAs, Molecular Beam Epitaxy, quantum nanostructures, photoluminescence
business.industry
Spatially resolved
General Physics and Astronomy
Decoupling (cosmology)
Epitaxy
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Gallium arsenide
chemistry.chemical_compound
Condensed Matter::Materials Science
chemistry
Quantum dot laser
Quantum dot
FISICA APLICADA
Optoelectronics
business
FIS/03 - FISICA DELLA MATERIA
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia, instname
- Accession number :
- edsair.doi.dedup.....8b5467ae284d509bf3192387aad57e80