Cite
Improved Resistive Switching Observed in Ti/Zr3N2/ p -Si Capacitor via Hydrogen Passivation
MLA
Dongjoo Bae, et al. “Improved Resistive Switching Observed in Ti/Zr3N2/ p -Si Capacitor via Hydrogen Passivation.” IEEE Access, vol. 10, Jan. 2022, pp. 6622–28. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....8b27c5d5308cc29a8fae7ddc96d9b8a0&authtype=sso&custid=ns315887.
APA
Dongjoo Bae, Doowon Lee, Sungho Kim, & Hee-Dong Kim. (2022). Improved Resistive Switching Observed in Ti/Zr3N2/ p -Si Capacitor via Hydrogen Passivation. IEEE Access, 10, 6622–6628.
Chicago
Dongjoo Bae, Doowon Lee, Sungho Kim, and Hee-Dong Kim. 2022. “Improved Resistive Switching Observed in Ti/Zr3N2/ p -Si Capacitor via Hydrogen Passivation.” IEEE Access 10 (January): 6622–28. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....8b27c5d5308cc29a8fae7ddc96d9b8a0&authtype=sso&custid=ns315887.