Ion-Sensitive Gated Bipolar Transistor

MLA

Raymond J. E. Hueting, et al. “Ion-Sensitive Gated Bipolar Transistor.” IEEE Transactions on Electron Devices, vol. 66, Oct. 2019, pp. 4354–60. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....8b135c95b407d49760362dcfbef892db&authtype=sso&custid=ns315887.

APA

Raymond J. E. Hueting, S. E. J. Vincent, Wouter Olthuis, J. G. Bomer, & Remco G.P. Sanders. (2019). Ion-Sensitive Gated Bipolar Transistor. IEEE Transactions on Electron Devices, 66, 4354–4360.

Chicago

Raymond J. E. Hueting, S. E. J. Vincent, Wouter Olthuis, J. G. Bomer, and Remco G.P. Sanders. 2019. “Ion-Sensitive Gated Bipolar Transistor.” IEEE Transactions on Electron Devices 66 (October): 4354–60. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....8b135c95b407d49760362dcfbef892db&authtype=sso&custid=ns315887.