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Depletion induced depolarization field in Hf 1−x Zr x O 2 metal-ferroelectric-semiconductor capacitors on germanium
- Source :
- Applied Physics Letters
- Publication Year :
- 2020
-
Abstract
- Germanium Metal-Ferroelectric-Semiconductor (MFS) capacitors based on ferroelectric Hf1−xZrxO2 (HZO) with clean, oxide free Ge/HZO interfaces emerge as an interesting layer structure for the fabrication of ferroelectric field effect transistor (FeFET) non-volatile memory devices. It is shown that, at low temperature (
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
business.industry
chemistry.chemical_element
Germanium
02 engineering and technology
Coercivity
021001 nanoscience & nanotechnology
01 natural sciences
Ferroelectricity
law.invention
Capacitor
Hysteresis
Semiconductor
chemistry
law
0103 physical sciences
Field-effect transistor
0210 nano-technology
business
Low voltage
Subjects
Details
- ISSN :
- 00036951
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi.dedup.....8a4b6ebb5e0822b5652fee7b727624c6
- Full Text :
- https://doi.org/10.1063/5.0007111