Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices

MLA

Augusto Benvenuti, et al. Assessment of the Statistical Impedance Field Method for the Analysis of the RTN Amplitude in Nanoscale MOS Devices. Jan. 2013. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....898d5d0e14e5cdc48f347d7b825390ae&authtype=sso&custid=ns315887.

APA

Augusto Benvenuti, Andrea L. Lacaita, Alessandro S. Spinelli, Christian Monzio Compagnoni, Andrea Ghetti, Giulio Torrente, & Niccolo Castellani. (2013). Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices.

Chicago

Augusto Benvenuti, Andrea L. Lacaita, Alessandro S. Spinelli, Christian Monzio Compagnoni, Andrea Ghetti, Giulio Torrente, and Niccolo Castellani. 2013. “Assessment of the Statistical Impedance Field Method for the Analysis of the RTN Amplitude in Nanoscale MOS Devices,” January. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....898d5d0e14e5cdc48f347d7b825390ae&authtype=sso&custid=ns315887.