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Upconversion of partition noise in semiconductors operating under periodic large-signal conditions

Authors :
Susana Perez
Luca Reggiani
Pavel Shiktorov
Viktoras Gružinskis
Tomas Gonzalez
J. C. Vaissiere
E. Starikov
Luca Varani
Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2)
Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)
Shiktorov, P.
Starikov, E.
Gruzinskis, V.
Perez, S.
Gonzalez, T.
Reggiani, Lino
Varani, L.
Vaissiere, J. C.
Source :
Physical Review B: Condensed Matter and Materials Physics (1998-2015), Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2003, 67 (16), pp.165201.1-165201.10. ⟨10.1103/PhysRevB.67.165201⟩, Scopus-Elsevier
Publication Year :
2003
Publisher :
HAL CCSD, 2003.

Abstract

International audience; By means of Monte Carlo simulations of bulk semiconductors operating in the periodic large-signal regime, we show the existence of upconversion of hot-carrier partition noise associated with the fluctuations between different groups of carriers in momentum space, characterized by different dynamical properties. The signature of the upconversion phenomenon is predicted by an analytical model and confirmed by the spectral analysis of the instantaneous spectral density of velocity fluctuations. As applications, we investigate the cases in which the two groups of carriers pertain to a single band in the presence of strong low-temperature optical-phonon emission and to lowest- and upper-valley populations in compound semiconductors.

Details

Language :
English
ISSN :
10980121 and 1550235X
Database :
OpenAIRE
Journal :
Physical Review B: Condensed Matter and Materials Physics (1998-2015), Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2003, 67 (16), pp.165201.1-165201.10. ⟨10.1103/PhysRevB.67.165201⟩, Scopus-Elsevier
Accession number :
edsair.doi.dedup.....878bf2f15797a7828f3e6705450aeaf4
Full Text :
https://doi.org/10.1103/PhysRevB.67.165201⟩