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Remarkable Strength Characteristics of Defect-Free SiGe/Si Heterostructures Obtained by Ge Condensation
- Source :
- Journal of Physical Chemistry C, Journal of Physical Chemistry C, 2016, 120 (36), pp.20333-20340. ⟨10.1021/acs.jpcc.6b06037⟩, Journal of Physical Chemistry C, American Chemical Society, 2016, 120 (36), pp.20333-20340. ⟨10.1021/acs.jpcc.6b06037⟩
- Publication Year :
- 2016
- Publisher :
- HAL CCSD, 2016.
-
Abstract
- International audience; We compare the morphological and structural features of SiGe membranes fabricated by three different processes: direct deposition of Si0.5Ge0.5 on. Si(001) nominal substrate, direct deposition Of Si0.5Ge0.5 on silicon on insulator, and deposition of SiGe with low Ge concentration on silicon on insulator followed by Ge enrichment by condensation. We show that the formation of fully strained Ge-rich layers free of defects with a flat surface is possible only by the two-step epitaxy-condensation process. We demonstrate that the condensation based process enables the total inhibition of the morphological instability, together with the hindering of dislocations for critical thickness much greater than those commonly obtained by direct deposition. Those behaviors could be explained by the injection of self-interstitials in the Ge-rich layers during condensation. Such remarkable properties systems using a similar condensation process. could be generalized to many other systems using a similar condensation process.
- Subjects :
- 010302 applied physics
Materials science
Condensation
Silicon on insulator
Defect free
Heterojunction
Nanotechnology
02 engineering and technology
Substrate (electronics)
021001 nanoscience & nanotechnology
01 natural sciences
Instability
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
General Energy
Membrane
Chemical physics
0103 physical sciences
Deposition (phase transition)
Physical and Theoretical Chemistry
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
0210 nano-technology
Subjects
Details
- Language :
- English
- ISSN :
- 19327447 and 19327455
- Database :
- OpenAIRE
- Journal :
- Journal of Physical Chemistry C, Journal of Physical Chemistry C, 2016, 120 (36), pp.20333-20340. ⟨10.1021/acs.jpcc.6b06037⟩, Journal of Physical Chemistry C, American Chemical Society, 2016, 120 (36), pp.20333-20340. ⟨10.1021/acs.jpcc.6b06037⟩
- Accession number :
- edsair.doi.dedup.....878abe703a104a33dc7187c966a1d9dc