High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2

MLA

Arkka Bhattacharyya, et al. “High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/Cm2.” IEEE Electron Device Letters, vol. 43, Oct. 2022, pp. 1637–40. EBSCOhost, https://doi.org/10.1109/led.2022.3196305.

APA

Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga, Carl Peterson, & Sriram Krishnamoorthy. (2022). High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2. IEEE Electron Device Letters, 43, 1637–1640. https://doi.org/10.1109/led.2022.3196305

Chicago

Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga, Carl Peterson, and Sriram Krishnamoorthy. 2022. “High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/Cm2.” IEEE Electron Device Letters 43 (October): 1637–40. doi:10.1109/led.2022.3196305.