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Four-wave mixing in semiconductor traveling-wave amplifiers for efficient, broadband, wavelength conversion up to 65 nm

Authors :
Kerry J. Vahala
M.A. Newkirk
Namkyoo Park
Jianhui Zhou
Barry Miller
Source :
Scopus-Elsevier
Publication Year :
2002
Publisher :
IEEE, 2002.

Abstract

Wavelength conversion is recognized as an important function in future fiber networks employing wavelength division multiplexing. The authors have recently demonstrated broad-band wavelength conversion over spans as large as 27 nm. Their approach uses ultra-fast four-wave mixing dynamics associated with intraband relaxation mechanisms in semiconductor traveling-wave amplifiers (TWA's). In the paper the authors present new results showing conversion over wavelength spans as large as 65 nm. This surpasses the previous record by over a factor of two. Of equal importance, they also verify experimentally their previous theoretical prediction that wavelength conversion efficiency varies as the cube of TWA single pass gain. In the course of our previous work, we have shown that the theoretical efficiency, η, of this process can be expressed by the simple relation: η = 3G + 2P + R(Δ⋋) where η is the ratio in dB of the converted signal output power to the signal input power and G is the single pass TWA optical gain. A crucial point is the presence of 3G in this expression - essentially, the wavelength converter uses the available TWA optimal gain three times. We verified this expression using an experimental setup similar to that described in. Tunable, single-frequency, erbium fiber ring lasers were used as pump and signal sources and TWA devices used contained tensile-strained mutli-quantum well active layers described in. Figure 1 shows conversion efficiency data plotted versus single-pass saturated optical gain. The pump power was -5.2 dBm and the signal power was -11.3 dBm. The measured slope of 3.18 confirms the cubic dependence of efficiency on single pass gain.

Details

Database :
OpenAIRE
Journal :
Proceedings of 1994 Nonlinear Optics: Materials, Fundamentals and Applications
Accession number :
edsair.doi.dedup.....8677456447f5bc6c6e3e16e26c448ffd