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Graphoepitaxy integration and pattern transfer of lamellar silicon-containing high-chi block copolymers
- Source :
- Proc. SPIE, SPIE Advanced Lithography, SPIE Advanced Lithography, 2018, San José, United States. ⟨10.1117/12.2299337⟩
- Publication Year :
- 2018
- Publisher :
- HAL CCSD, 2018.
-
Abstract
- In this work, we present our recent achievements on the integration and transfer etching of a novel silicon-containing high-χ block copolymer for lines/spaces applications. Developed carbo-silane BCPs are synthesized under industrial conditions and present periodicities as low as 14 nm. A full directed self-assembly by graphoepitaxy process is shown using standard photolithography stacks and all processes are performed on 300 mm wafer compatible tools. Specific plasma processes are developed to isolate perpendicular lamellae and sub-12 nm features are finally transferred into silicon substrates. The quality of the final BCP hard mask (CDU, LWR, LER) are also investigated. Finally, thanks to the development of dedicated neutral layers and top-coats allowing perpendicular orientations, it was possible to investigate plasma etching experiments on full-sheets at 7 nm resolution, opening the way to the integration of these polymers in chemoepitaxy stacks.
- Subjects :
- chemistry.chemical_classification
[PHYS]Physics [physics]
Materials science
Plasma etching
Silicon
business.industry
chemistry.chemical_element
02 engineering and technology
Polymer
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
law.invention
chemistry
Etching (microfabrication)
law
Perpendicular
Optoelectronics
Wafer
Lamellar structure
Photolithography
0210 nano-technology
business
ComputingMilieux_MISCELLANEOUS
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Proc. SPIE, SPIE Advanced Lithography, SPIE Advanced Lithography, 2018, San José, United States. ⟨10.1117/12.2299337⟩
- Accession number :
- edsair.doi.dedup.....84ede20949bda1d236cf2b1f0c2029a4