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Graphoepitaxy integration and pattern transfer of lamellar silicon-containing high-chi block copolymers

Authors :
Zelsmann, Marc
Bézard, Philippe
Chevalier, Xavier
Legrain, Antoine
Navarro, Christophe
Nicolet, Célia
Fleury, Guillaume
Cayrefourcq, Ian
Tiron, Raluca
Engelmann, Sebastian
Wise, Richard
Laboratoire des technologies de la microélectronique (LTM )
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Arkema (Arkema)
Laboratoire de Chimie des Polymères Organiques (LCPO)
Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC)
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI)
Direction de Recherche Technologique (CEA) (DRT (CEA))
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Source :
Proc. SPIE, SPIE Advanced Lithography, SPIE Advanced Lithography, 2018, San José, United States. ⟨10.1117/12.2299337⟩
Publication Year :
2018
Publisher :
HAL CCSD, 2018.

Abstract

In this work, we present our recent achievements on the integration and transfer etching of a novel silicon-containing high-χ block copolymer for lines/spaces applications. Developed carbo-silane BCPs are synthesized under industrial conditions and present periodicities as low as 14 nm. A full directed self-assembly by graphoepitaxy process is shown using standard photolithography stacks and all processes are performed on 300 mm wafer compatible tools. Specific plasma processes are developed to isolate perpendicular lamellae and sub-12 nm features are finally transferred into silicon substrates. The quality of the final BCP hard mask (CDU, LWR, LER) are also investigated. Finally, thanks to the development of dedicated neutral layers and top-coats allowing perpendicular orientations, it was possible to investigate plasma etching experiments on full-sheets at 7 nm resolution, opening the way to the integration of these polymers in chemoepitaxy stacks.

Details

Language :
English
Database :
OpenAIRE
Journal :
Proc. SPIE, SPIE Advanced Lithography, SPIE Advanced Lithography, 2018, San José, United States. ⟨10.1117/12.2299337⟩
Accession number :
edsair.doi.dedup.....84ede20949bda1d236cf2b1f0c2029a4