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GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- Source :
- Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials.
- Publication Year :
- 1991
- Publisher :
- The Japan Society of Applied Physics, 1991.
-
Abstract
- A GaAs pseudo-heterojunction bipolar transistor with a heavily carbon-doped base grown by metalorganic molecular beam epitaxy was fabricated, and the highest dc current gain of 1.7 was obtained, which evidences band-gap narrowing in the base. However, hole injection from the base to the emitter still cannot be ignored, and the use of a heavily carbon-doped InGaAs base is proposed to improve transistor characteristics.
- Subjects :
- Materials science
Heterostructure-emitter bipolar transistor
business.industry
Heterojunction bipolar transistor
Bipolar junction transistor
Transistor
General Engineering
General Physics and Astronomy
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Epitaxy
law.invention
Condensed Matter::Materials Science
law
Carbon doped
Optoelectronics
business
Base (exponentiation)
Molecular beam
Common emitter
Molecular beam epitaxy
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials
- Accession number :
- edsair.doi.dedup.....84e90b3ebb252fd5b096585c3e7e9264