An improved model for chip carrier at microwave frequencies

In PHEMT chip characterization, the parasitic elements due to the chip carrier have to be de-embedded prior to the extraction of the intrinsic elements. At frequencies lower than 5 GHz, the chip carrier is modeled by a “π” capacitive network; however, at frequencies around 10 GHz, a resonance on the Y21-parameter of the chip carrier alone is observed, and the “π” capacitive circuit is no longer valid. In this work, an improved circuit for modeling the chip carrier in the frequency range of 0.045–26.5 GHz is proposed. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 20: 233–236, 1999.