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Dislocations at the interface between sapphire and GaN
- Source :
- Journal of materials science / Materials in electronics 19, 143-148 (2008). doi:10.1007/s10854-007-9307-4
- Publication Year :
- 2008
- Publisher :
- Springer Science + Business Media B.V, 2008.
-
Abstract
- GaN layers grown by metal organic vapour phase epitaxy on sapphire were imaged by synchrotron radiation X-ray topography. The threading dislocations could not be resolved in the topographs due to t ...
- Subjects :
- Threading dislocations
Materials science
Cell network
business.industry
Vapour phase epitaxy
Binary compound
Synchrotron radiation
Gallium nitride
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Crystallography
chemistry
Sapphire
Aluminium oxide
Optoelectronics
Electrical and Electronic Engineering
business
ddc:600
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Journal of materials science / Materials in electronics 19, 143-148 (2008). doi:10.1007/s10854-007-9307-4
- Accession number :
- edsair.doi.dedup.....83faad6d092e016a8e3544aa72a8f269