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Electron transport at surfaces and interfaces
- Source :
- CHIMIA, Vol 66, Iss 1-2 (2012)
- Publication Year :
- 2012
-
Abstract
- Here we present two techniques which give insight on transport phenomena with atomic resolution. Ballistic electron emission microscopy is used to study the ballistic transport through layered heterogeneous systems. The measured ballistic fraction of the tunneling current provides information about lossless transport channels through metallic layers and organic adsorbates. The transport characteristics of Bi(111)/Si Schottky devices and the influence of the organic adsorbates perylene tetracaboxylic dianhydride acid and C60 on the ballistic current are discussed. Scanning tunneling potentiometry gives access to the lateral transport along a surface, thus scattering processes within two-dimensional electron systems for the Bi(111) surface and the Si(111)(?3 × ?3)-Ag surface could be visualized.
- Subjects :
- Silicon
Materials science
Silver
Ballistic electron emission microscopy
Scanning tunneling potentiometry
Surface Properties
Electron
Electron Transport
Bi(111)
Microscopy, Scanning Tunneling
Ballistic conduction
Ptcda
Particle Size
QD1-999
Perylene
Quantum tunnelling
Scattering
Schottky diode
General Medicine
General Chemistry
Physik (inkl. Astronomie)
Electron transport chain
C60
Chemistry
Chemical physics
Adsorption
Fullerenes
Transport phenomena
Bismuth
Subjects
Details
- ISSN :
- 00094293
- Volume :
- 66
- Issue :
- 1-2
- Database :
- OpenAIRE
- Journal :
- Chimia
- Accession number :
- edsair.doi.dedup.....83ca174a1a336cdfb0f53dbd7d5c3fe3