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Design of InAs/GaSb superlattice infrared barrier detectors
- Source :
- Superlattices and Microstructures, Superlattices and Microstructures, Elsevier, 2017, 104, pp.402-414. ⟨10.1016/j.spmi.2017.03.001⟩
- Publication Year :
- 2017
- Publisher :
- HAL CCSD, 2017.
-
Abstract
- Design of InAs/GaSb type-II superlattice (T2SL) infrared barrier detectors is theoretically investigated. Each part of the barrier structures is studied in order to achieve optimal device operation at 150 K and 77 K, in the midwave and longwave infrared domain, respectively. Whatever the spectral domain, nBp structure with a p-type absorbing zone and an n-type contact layer is found to be the most favourable detector architecture allowing a reduction of the dark-current associated with generation-recombination processes. The nBp structures are then compared to pin photodiodes. The MWIR nBp detector with 5 μm cut-off wavelength can operate up to 120 K, resulting in an improvement of 20 K on the operating temperature compared to the pin device. The dark-current density of the LWIR nBp device at 77 K is expected to be as low as 3.5 × 10−4 A/cm2 at 50 mV reverse bias, more than one decade lower than the usual T2SL photodiode. This result, for a device having cut-off wavelength at 12 μm, is at the state of the art compared to the well-known MCT ‘rule 07’.
- Subjects :
- Infrared
Superlattice
02 engineering and technology
01 natural sciences
law.invention
Optics
Operating temperature
law
0103 physical sciences
General Materials Science
Electrical and Electronic Engineering
QC
ComputingMilieux_MISCELLANEOUS
010302 applied physics
Physics
business.industry
Detector
021001 nanoscience & nanotechnology
Condensed Matter Physics
Photodiode
[SPI.TRON]Engineering Sciences [physics]/Electronics
Wavelength
Optoelectronics
Infrared detector
0210 nano-technology
business
Dark current
Subjects
Details
- Language :
- English
- ISSN :
- 07496036 and 10963677
- Database :
- OpenAIRE
- Journal :
- Superlattices and Microstructures, Superlattices and Microstructures, Elsevier, 2017, 104, pp.402-414. ⟨10.1016/j.spmi.2017.03.001⟩
- Accession number :
- edsair.doi.dedup.....82f823b00fc611e19b9a821315b6750c