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Intrinsic Semiconducting Behavior in a Large Mixed-Valent Uranium(V/VI) Cluster

Authors :
Liwei Cheng
Yaxing Wang
Chengyu Liang
Guo-Dong Cheng
Shicheng Gong
Yumin Wang
Linwei He
Zhifang Chai
Shuao Wang
Shu-Xian Hu
Juan Diwu
Mingxing Zhang
Duo Zhang
Jiong Li
Junchang Chen
Guozhong Wu
Source :
Angewandte Chemie (International ed. in English). 60(18)
Publication Year :
2020

Abstract

We disclose the intrinsic semiconducting properties of one of the largest mixed-valent uranium clusters, [H3 O+ ][UV (UVI O2 )8 (μ3 -O)6 (PhCOO)2 (Py(CH2 O)2 )4 (DMF)4 ] (Ph=phenyl, Py=pyridyl, DMF=N,N-dimethylformamide) (1). Single-crystal X-ray crystallography demonstrates that UV center is stabilized within a tetraoxo core surrounded by eight uranyl(VI) pentagonal bipyramidal centers. The oxidation states of uranium are substantiated by spectroscopic data and magnetic susceptibility measurement. Electronic spectroscopy and theory corroborate that UV species serve as electron donors and thus facilitate 1 being a n-type semiconductor. With the largest effective atomic number among all reported radiation-detection semiconductor materials, charge transport properties and photoconductivity were investigated under X-ray excitation for 1: a large on-off ratio of 500 and considerable charge mobility lifetime product of 2.3×10-4 cm2 V-1 , as well as a high detection sensitivity of 23.4 μC Gyair-1 cm-2 .

Details

ISSN :
15213773
Volume :
60
Issue :
18
Database :
OpenAIRE
Journal :
Angewandte Chemie (International ed. in English)
Accession number :
edsair.doi.dedup.....82656e577c0c1197643c8c435acd8295