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Characterization of GaN HEMT transistors for DC/DC converters in transportation applications
- Source :
- RUO. Repositorio Institucional de la Universidad de Oviedo, instname
- Publication Year :
- 2020
-
Abstract
- IEEE Vehicle Power and Propulsion Conference (VPPC) (17th. 2020. Gijón, Spain)<br />This work has been partially funded from the EU H2020 R&I Program under grant agreement 864459 (Project ”TALENT”), and through ERFD Structural Funds. This wok has been partially supported by the Spanish Government, ID&R Office (MEC), under research grants ENE2016-77919 (Project “Conciliator”), and PID2019-111051RB-100 (Project “B2BEnergy”). This work has been partially supported by the government of Principality of Asturias (FICYT), under Grant FC-GRUPIN-IDI/2018/000241 and Severo Ochoa research grant PF-BP19-078.
- Subjects :
- Materials science
business.industry
electric vehicle
DC/DC converters
gallium nitride
double pulse test
020208 electrical & electronic engineering
Transistor
Gallium nitride
02 engineering and technology
High-electron-mobility transistor
Propulsion
Converters
Double pulse
Characterization (materials science)
law.invention
chemistry.chemical_compound
Semiconductor
chemistry
law
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- RUO. Repositorio Institucional de la Universidad de Oviedo, instname
- Accession number :
- edsair.doi.dedup.....81d63390b721a08c6d72eda9d9c65bd6