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Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography
- Source :
- Nanotechnology, Nanotechnology, 2016, 27 (30), pp.305402. ⟨10.1088/0957-4484/27/30/305402⟩, Nanotechnology, Institute of Physics, 2016, 27 (30), pp.305402. ⟨10.1088/0957-4484/27/30/305402⟩
- Publication Year :
- 2016
- Publisher :
- IOP Publishing, 2016.
-
Abstract
- The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs.
- Subjects :
- Materials science
Bioengineering
Nanotechnology
Scale (descriptive set theory)
02 engineering and technology
Atom probe
01 natural sciences
Molecular physics
law.invention
law
0103 physical sciences
Atom
General Materials Science
Statistical analysis
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
Electrical and Electronic Engineering
ComputingMilieux_MISCELLANEOUS
010302 applied physics
Mechanical Engineering
Triple junction
Direct observation
General Chemistry
021001 nanoscience & nanotechnology
Distribution (mathematics)
Mechanics of Materials
0210 nano-technology
Subjects
Details
- ISSN :
- 13616528 and 09574484
- Volume :
- 27
- Database :
- OpenAIRE
- Journal :
- Nanotechnology
- Accession number :
- edsair.doi.dedup.....80cfcdb3c988574be8325a1a6329f284
- Full Text :
- https://doi.org/10.1088/0957-4484/27/30/305402