New BIMOS transistor in 28nm FDSOI technology: Operation in 4-Gate JFET mode

Authors :: Sotirios Athanasiou
Ph. Galy
Sorin Cristoloveanu
STMicroelectronics [Crolles] (ST-CROLLES)
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
Source :: 2015 CAS Proceedings, 2015 International Semiconductor Conference (CAS), 2015 International Semiconductor Conference (CAS), Oct 2015, Sinaia, Romania. pp.157-160, ⟨10.1109/SMICND.2015.7355193⟩
Publication Year :: 2015
Publisher :: HAL CCSD, 2015.
Abstract: International audience; In this paper, we introduce a new BIMOS transistor fabricated with 28nm high-k metal-gate FDSOI UTBB technology. The device is highly flexible and reconfigurable as it can be operated in MOS, Bipolar, Hybrid and 4-Gate modes. We investigate the bias conditions for JFET-like operation and show promising performance even in structures with ultrathin Si film.

Language :: English
Database :: OpenAIRE
Journal :: 2015 CAS Proceedings, 2015 International Semiconductor Conference (CAS), 2015 International Semiconductor Conference (CAS), Oct 2015, Sinaia, Romania. pp.157-160, ⟨10.1109/SMICND.2015.7355193⟩
Accession number :: edsair.doi.dedup.....80cddb2e85be59e4e2f36eb66423be15
Full Text :: https://doi.org/10.1109/SMICND.2015.7355193⟩