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Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy
- Source :
- Scientific Reports, Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
- Publication Year :
- 2019
- Publisher :
- Nature Publishing Group UK, 2019.
-
Abstract
- We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.
- Subjects :
- 0301 basic medicine
Materials science
Computer Science::Neural and Evolutionary Computation
lcsh:Medicine
Ferromagnetic semiconductor
Article
Out of plane
03 medical and health sciences
Magnetization
Condensed Matter::Materials Science
0302 clinical medicine
Hall effect
Antiferromagnetism
lcsh:Science
Coupling
Multidisciplinary
Condensed matter physics
lcsh:R
Computer Science::Software Engineering
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Magnetic anisotropy
030104 developmental biology
Ferromagnetism
Computer Science::Programming Languages
lcsh:Q
030217 neurology & neurosurgery
Subjects
Details
- Language :
- English
- ISSN :
- 20452322
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- Scientific Reports
- Accession number :
- edsair.doi.dedup.....80ba4c89f74964496aba3df683860303