Testing the relative deformation of the lattice parameter of semiinsulating GaAs using reflected radiation

A noncontact method for the express-testing of the relative deformation of lattice parameter (Δa/a ) of semiinsulating GaAs has been developed. This method is based on measuring the reflected radiation in band-to-band regions L3v - L1c and X5v - X3c. The suggested method ensures a resolution of 4 × 10-5 in determining (Δa/a ) and has a measurement accuracy of about 0.5%.