Analysis of Contact Reaction Phenomenon between Aluminum–Silver and p+ Diffused Layer for n-Type c-Si Solar Cell Applications

Authors :: Sunhwa Lee
Junsin Yi
Shihyun Ahn
Nagarajan Balaji
Cheolmin Park
Sungyoon Chung
Jinjoo Park
Source :: Energies, Vol 13, Iss 4537, p 4537 (2020), Energies, Volume 13, Issue 17
Publication Year :: 2020
Publisher :: MDPI AG, 2020.
Abstract: In this study, the contact mechanism between Ag&ndash Al and Si and the change in contact resistance (Rc) were analyzed by varying the firing profile. The front electrode of an n-type c-Si solar cell was formed through a screen-printing process using Ag&ndash Al paste. Rc was measured by varying the belt speed and peak temperature of the fast-firing furnace. Rc value of 6.98 m&Omega cm&minus 2 was obtained for an optimal fast-firing profile with 865 &deg C peak temperature and 110 inches per min belt speed. The contact phenomenon and the influence of impurities between the front-electrode&ndash Si interface and firing conditions were analyzed through scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS). The EDS analysis revealed that the peak firing temperature at 865 &deg C exhibited a low atomic weight percentage of Al (0.72 and 0.36%) because Al was involved in the formation of alloy of Si with the front electrode. Based on the optimal results, a solar cell with a conversion efficiency of 19.46% was obtained.

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