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Formation of composite InGaN/GaN/InAlN quantum dots
- Source :
- Semiconductors, Semiconductors, 2010, 44 (10), pp.1338-1341. ⟨10.1134/S1063782610100167⟩
- Publication Year :
- 2010
- Publisher :
- HAL CCSD, 2010.
-
Abstract
- International audience; Composite InGaN/GaN/InAlN quantum dots (QDs) have been formed and studied. The structural properties of thin InAlN layers overgrown with GaN have been analyzed, and it is shown that 3D islands with lateral sizes of ∼(20–30) nm are formed in structures of this kind. It is demonstrated that deposition of a thin InGaN layer onto the surface of InAlN islands overgrown with a thin GaN layer leads to transformation of the continuous InGaN layer to an array of isolated QDs with lateral sizes of 20–30 nm and heights of 2–3 nm. The position of these QDs in the growth direction correlates with that of InAlN islands.
- Subjects :
- 010302 applied physics
[PHYS]Physics [physics]
Materials science
Nanostructure
business.industry
Composite number
02 engineering and technology
Nitride
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Quantum dot
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Layer (electronics)
Deposition (law)
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Semiconductors, Semiconductors, 2010, 44 (10), pp.1338-1341. ⟨10.1134/S1063782610100167⟩
- Accession number :
- edsair.doi.dedup.....7e260f0d2b35d3b7d6177b16db1e56f2