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Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities
- Source :
- Journal of Applied Physics, Journal of Applied Physics, American Institute of Physics, 2012, 111, pp.093719. ⟨10.1063/1.4710529⟩
- Publication Year :
- 2012
- Publisher :
- HAL CCSD, 2012.
-
Abstract
- The coexistence of two types of carriers (free electrons and free holes) in InN:Mg and their competition is demonstrated by the temperature and magnetic-field-induced change of the sign of thermopower (a) as well as the maximum entropy mobility spectrum analysis. The results confirm the existence of alternative carrier channels in addition to the n-type surface inversion layer and p-type bulk. They also show that In-polarity can be propitious for occurrence of p-type conductivity.
- Subjects :
- 010302 applied physics
Free electron model
Electron mobility
Condensed matter physics
Chemistry
Wide-bandgap semiconductor
General Physics and Astronomy
02 engineering and technology
Electron
Conductivity
021001 nanoscience & nanotechnology
01 natural sciences
Surface conductivity
Condensed Matter::Materials Science
Seebeck coefficient
0103 physical sciences
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
0210 nano-technology
Entropy (arrow of time)
[PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]
Subjects
Details
- Language :
- English
- ISSN :
- 00218979 and 10897550
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics, Journal of Applied Physics, American Institute of Physics, 2012, 111, pp.093719. ⟨10.1063/1.4710529⟩
- Accession number :
- edsair.doi.dedup.....7d9d29bca9c4367294db8103767ba6d8