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Study of parasitic trapping in alumina used as blocking oxide for nonvolatile memories
- Source :
- Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2011, 29 (1), pp.159-165. ⟨10.1116/1.3535552⟩, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2011, 29 (1), pp.159-165. ⟨10.1116/1.3535552⟩
- Publication Year :
- 2011
- Publisher :
- HAL CCSD, 2011.
-
Abstract
- International audience; Alumina layers deposited by Atomic Layer Deposition followed by Rapid Thermal anneal were characterized. We found that the crystallization of alumina in γ-phase occurs between 700 and 850°C. Optical band gap, stress and density were found to increase upon crystallization Hydrogen content in alumina was characterized by ToF-SIMS and infrared spectroscopy. We found that annealing ambience has a strong influence on hydrogen concentration: oxygen favors hydrogen desorption from alumina. Finally, charge trapping in alumina was characterized by C(V) measurements. A strong correlation between hydrogen concentration and trapping was established.
- Subjects :
- Materials science
Hydrogen
Annealing (metallurgy)
Band gap
Process Chemistry and Technology
Analytical chemistry
Oxide
chemistry.chemical_element
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
chemistry.chemical_compound
Atomic layer deposition
chemistry
law
Desorption
Materials Chemistry
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering
Electrical and Electronic Engineering
Thin film
Crystallization
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Instrumentation
Subjects
Details
- Language :
- English
- ISSN :
- 0734211X and 15208567
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2011, 29 (1), pp.159-165. ⟨10.1116/1.3535552⟩, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2011, 29 (1), pp.159-165. ⟨10.1116/1.3535552⟩
- Accession number :
- edsair.doi.dedup.....7d339975dbbc5ab5b1aa50ee7447b53b
- Full Text :
- https://doi.org/10.1116/1.3535552⟩