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LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN In<font>GaAs</font> MOSFETs WITH <font>GdScO</font>3 HIGH-K DIELECTRIC
- Source :
- Frontiers in Electronics.
- Publication Year :
- 2013
- Publisher :
- WORLD SCIENTIFIC, 2013.
-
Abstract
- Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO 3 high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.
- Subjects :
- Condensed Matter::Quantum Gases
Materials science
business.industry
Infrasound
Electrical engineering
Physics::Optics
Conductance
Dielectric
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Gate voltage
Electronic, Optical and Magnetic Materials
Computer Science::Hardware Architecture
Computer Science::Emerging Technologies
Hardware and Architecture
MOSFET
Trap density
Electronic engineering
Optoelectronics
Field-effect transistor
Electrical and Electronic Engineering
business
Noise (radio)
High-κ dielectric
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Frontiers in Electronics
- Accession number :
- edsair.doi.dedup.....7b3b5f89c27e3c4de0f8a102d501a44c