Synthesis and characterization of Gallium Nitride nanocrystals

A simple method to synthesize Gallium Nitride (GaN) powder using gallium trichloride (GaCl 3 ) and ethylene diamine tetra acetic acid (EDTA) as starting materials has been discussed in this article. GaN nanocrystals were synthesized by nitradation of Gallium-EDTA complex at different temperatures of 600 °C, 700 °C, 800 °C and 900 °C in ammonia (NH 3 ) atmosphere. X-ray diffraction analysis revealed the formation of single phase hexagonal GaN for the compound synthesized at temperature of 900 °C. However the other low temperature synthesis resulted mixed phases of β-Ga 2 O 3 , 2GaONO 3 .N 2 O 5 and GaN. Scanning electron microscopy images show that the particles were in the form of agglomerates. The average size of the particle was found to be ∼20 nm by transmission electron microscopy. Energy Dispersive X-ray diffraction analysis shows variation in elemental composition of synthesized compound with respect to temperature. The room temperature photoluminescence exhibits band-edge emission of GaN at 3.46 eV.