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Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction
- Source :
- Journal of Applied Physics, Journal of Applied Physics, American Institute of Physics, 2010, 107 (7), ⟨10.1063/1.3371356⟩
- Publication Year :
- 2010
- Publisher :
- AIP Publishing, 2010.
-
Abstract
- In this paper, we have investigated the optical properties of InAs quantum dots (Qds) embedded near the channel of a delta-doped AlGaAs/GaAs high electron mobility transistor. In order to study the influence of the two-dimensional electron gas (2DEG) on the luminescence of QDs, we have prepared different structures in which we varied the thickness (d) separating the interface of AlGaAs/GaAs heterojunction from the InAs quantum dot layer. Various photoluminescence (PL) behaviors are observed when d decreases. PL spectra show the existence of two peaks which can be attributed to transition energies from the ground state (E1-HH1) and the first excited state (E2-HH2). A blueshift, a decrease in the PL intensity and an increase in the full width at half maximum of the PL peaks are observed, when the InAs QDs layer is closer to the 2DEG.
- Subjects :
- 010302 applied physics
Photoluminescence
Materials science
business.industry
General Physics and Astronomy
Heterojunction
02 engineering and technology
High-electron-mobility transistor
021001 nanoscience & nanotechnology
01 natural sciences
Blueshift
[SPI]Engineering Sciences [physics]
Full width at half maximum
Quantum dot
Excited state
0103 physical sciences
Optoelectronics
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
0210 nano-technology
business
Ground state
ComputingMilieux_MISCELLANEOUS
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 107
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....781d23d809462c5264b51ed942e7acb5