Interplay between GaN and AlN sublattices in wurtzite AlxGa1−xN alloys revealed by Raman spectroscopy

Authors :: E. Calleja
Jose Luis Pau
F. Omnès
M. A. Sánchez-Garcı́a
E. Muñoz
A. L. Alvarez
P. R. Hageman
Fernando Calle
Pierre Gibart
Eva Monroy
Source :: Journal of Applied Physics, 92, 223-226, Journal of Applied Physics, 92, 1, pp. 223-226
Publication Year :: 2002
Publisher :: AIP Publishing, 2002.
Abstract: The large frequency shift displayed by the longitudinal optical (LO) phonons A1(LO) and E1(LO) when going from GaN to AlN promises an accurate determination of the composition in AlxGa1−xN bulk layers by Raman spectroscopy. However, this determination is affected by a large uncertainty for low Al mole fractions (x

Subjects :: Materials science
Silicon
Condensed matter physics
Phonon
Wide-bandgap semiconductor
Analytical chemistry
General Physics and Astronomy
chemistry.chemical_element
Spectral line
Spectral line shape
symbols.namesake
chemistry
symbols
Sapphire
Raman spectroscopy
GeneralLiterature_REFERENCE(e.g.,dictionaries,encyclopedias,glossaries)
Wurtzite crystal structure

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