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Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium

Authors :
Yongbin Bang
Eun-Jung Lee
Sang Yoon Park
Young Joon Yoo
Hak Ji Lee
Young Pyo Jeon
Source :
Electronics, Vol 10, Iss 2564, p 2564 (2021), Electronics, Volume 10, Issue 21
Publication Year :
2021
Publisher :
MDPI AG, 2021.

Abstract

Recent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also display fascinating neuromorphic behaviors. We investigated the basic human brain’s learning and memory algorithm for “memorizing” as a feature for memristive devices based on Li-implanted structures with low power consumption. A topographical and surface chemical functionality analysis of an Li:ITO substrate was conducted to observe its characterization. In addition, a switching mechanism of a memristive device was theoretically studied and associated with ion migrations into a polymeric insulating layer. Biological short-term and long-term memory properties were imitated with the memristive device using low power consumption.

Details

Language :
English
ISSN :
20799292
Volume :
10
Issue :
2564
Database :
OpenAIRE
Journal :
Electronics
Accession number :
edsair.doi.dedup.....76665b980165d6e252b7d3c9d405512f