Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

Two-dimensional materials (2DMs) are competitive candidates in replacing or supplementing conventional semiconductors owing to their atomically uniform thickness. However, current conventional micro/nanofabrication technologies realize hardly ultrashort channel and integration, especially for sub-10 nm. Meanwhile, experimental device performance associated with the scaling of dimension needs to be investigated, due to the short channel effects. Here, we show a novel and universal technological method to fabricate sub-10 nm gaps with sharp edges and steep sidewalls. The realization of sub-10 nm gaps derives from a corrosion crack along the cleavage plane of Bi2O3. By this method, ultrathin body field-effect transistors (FETs), consisting of 8.2 nm channel length, 6 nm high-k dielectric, and 0.7 nm monolayer MoS2, exhibit no obvious short channel effects. The corresponding current on/off ratio and subthreshold swing reaches to 106 and 140 mV/dec, respectively. Moreover, integrated circuits with sub-10 nm ch...