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Features of temperature dependence of contact resistivity in ohmic contacts on lappedn-Si
- Source :
- Journal of applied physics 112, 063703 (2012). doi:10.1063/1.4752715
- Publication Year :
- 2012
- Publisher :
- AIP Publishing, 2012.
-
Abstract
- The temperature dependence of contact resistivity rho(c) in lapped silicon specimens with donor concentrations of 5 x 10(16), 3 x 10(17), and 8 x 10(17) cm(-3) was studied experimentally. We found that, after decreasing part of the rho(c)(T) curve in the low temperature range, an increasing part is registered with increasing temperature T. It is demonstrated that the formation of contact to a lapped Si wafer results in the generation of high dislocation density in the near-surface region of the semiconductor and also in ohmic contact behavior. In this case, current flows through the metal shunts associated with dislocations. The theory developed is in good agreement with experimental results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752715]
- Subjects :
- Materials science
Silicon
Condensed matter physics
business.industry
Contact resistance
General Physics and Astronomy
chemistry.chemical_element
Atmospheric temperature range
equipment and supplies
Semiconductor
chemistry
Electrical resistivity and conductivity
ddc:530
Wafer
Dislocation
business
Ohmic contact
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 112
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....756d582feecdcaef1f3c496881d41f0c