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Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration
- Source :
- Solid-State Device Research Conference (ESSDERC), 2016 46th European, Solid-State Device Research Conference (ESSDERC), 2016 46th European, 2016, Unknown, Unknown Region. pp.127-130, ⟨10.1109/ESSDERC.2016.7599604⟩, 2016 46th European Solid-State Device Research Conference (ESSDERC), ESSDERC
- Publication Year :
- 2016
- Publisher :
- HAL CCSD, 2016.
-
Abstract
- cited By 0; International audience; We report on the layout effects in strained SiGe channel FDSOI pMOSFETS down to 20nm gate length. Two SiGe integration schemes are compared: the SiGe-first approach, with Ge-enrichment performed prior to the STI module and the SiGe-last approach using only a SiGe epitaxy after the STI module. We evidence reduced layout effects in the SiGe-last integration featuring Si/SiGe bilayer. SiGe-last shows -39% mobility for 170nm narrow 2μm long channel, but +21% Ieff at Lg=20nm and gate-to-STI distance of 59nm. It is translated into a -15% delay reduction for ring oscillators of 1-finger inverters. Layout dependences are explained by physical strain measurements and reproduced by a stress-based electrical model. © 2016 IEEE.
- Subjects :
- Materials science
SiGe
Electrical model
Gate length
Integration
layout effects
02 engineering and technology
Ring oscillator
Epitaxy
01 natural sciences
Strain
Stress (mechanics)
chemistry.chemical_compound
0103 physical sciences
Electronic engineering
Layout dependences
Electrical modeling
Silicon alloys
010302 applied physics
[PHYS]Physics [physics]
Solid state devices
business.industry
Germanium
Delay reduction
021001 nanoscience & nanotechnology
Integration scheme
Reconfigurable hardware
FDSOI
Silicon-germanium
chemistry
Logic gate
Optoelectronics
0210 nano-technology
business
Communication channel
Subjects
Details
- Language :
- English
- ISBN :
- 978-1-5090-2969-3
- ISBNs :
- 9781509029693
- Database :
- OpenAIRE
- Journal :
- Solid-State Device Research Conference (ESSDERC), 2016 46th European, Solid-State Device Research Conference (ESSDERC), 2016 46th European, 2016, Unknown, Unknown Region. pp.127-130, ⟨10.1109/ESSDERC.2016.7599604⟩, 2016 46th European Solid-State Device Research Conference (ESSDERC), ESSDERC
- Accession number :
- edsair.doi.dedup.....74f99594e3eba1ef53825f4f7cfb81a4
- Full Text :
- https://doi.org/10.1109/ESSDERC.2016.7599604⟩